1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source KDB2532 (fdb2532) features r ds(on) = 14m (typ.), v gs = 10v, i d = 33a q g(tot) = 82nc (typ.), v gs = 10v low miller charge low qrr body diode uis capability (single pulse and repetitive pulse) absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 150 v gate to source voltage v gss 20 v drain current-continuous t c =25 79 a t a =25 8a power dissipation 310 w derate above 25 2.07 w/ thermal resistance junction to ambient r ja 43 /w channel temperature t ch 175 storage temperature t stg -55to+175 p d i d product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain to source breakdown voltage v dss i d =250a v gs =0v 150 v v ds =120v,v gs =0 1 v ds =120v,v gs =0,t c =150 250 gate leakage current i gss v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 v v gs =10v,i d =33a 0.014 0.016 v gs =6v,i d =16a 0.016 0.024 v gs =10v,i d =33a,t c =175 0.040 0.048 input capacitance c iss 5870 pf output capacitance c oss 615 pf reverse transfer capacitance c rss 135 pf total gate charge at 10v q g(tot) v gs = 0v to 10v 82 107 nc threshold gate charge q g(th) v gs =0vto2v 11 14 nc gate to source gate charge q gs v ds = 75v, 23 nc gate charge threshold to plateau q gs2 i g =1.0ma 13 nc gate to drain "miller" charge q gd i d = 33a 19 nc turn-on time t on 69 ns turn-on delay time t d(on) 16 ns rise time t r 30 ns turn-off delay time t d(off) 39 ns fall time t f 17 ns turn-off time t off 84 ns reverse recovery time t rr i sd = 33a, d isd /d t = 100a/s 105 ns reverse recovered charge q rr i sd = 33a, d isd /d t = 100a/s 327 nc i sd = 33a 1.25 v i sd = 16a 1.0 v source to drain diode voltage v sd a drain to source on-state resistance r ds(on) v ds =25v,v gs =0,f=1mhz drain cut-off current i dss v dd = 75v, i d = 33a v gs = 10v, r gs =3.6 KDB2532 (fdb2532) product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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